Graphene Film on Silicon Substrate

Product introduction:

Graphene film is transferred to Si / SiO2 and Si substrate, which has high conductivity, high mobility, semiconductor substrate, good thermal conductivity and other properties

It can be used in electronic components (FET, menms, etc.), biochips, electrode materials, etc.

Characteristic:

Uniform appearance, no impurities

Uniform and stable square resistance

Graphene single crystal has uniform size and few defects.

Application:

High speed transistor

MEMS

Biochip

Gas sensor and strain sensor

Suggestions for use

Storage conditions: temperature 25-30 ℃, humidity not less than 65% RH

It is forbidden to use contact cleaning process such as ultrasonic

P-type or N-type doping can be carried out according to the requirements of the device;

It can be patterned according to the device requirements.